• XH-GS0101GWP Ku-band 1W 4-channel Phased Array SiP Module | Wafer-level Packaged T/R RF Component,XH-Nexus,Ku-band 1W SiP module TCGS0101GWP
  • XH-GS0101GWP Ku-band 1W 4-channel Phased Array SiP Module | Wafer-level Packaged T/R RF Component,XH-Nexus,Ku-band 1W SiP module TCGS0101GWP

XH-GS0101GWP Ku-band 1W 4-channel Phased Array SiP Module | Wafer-level Packaged T/R RF Component

No.XH-GS0101GWP
The XH-GS0101GWP is a Ku-band wafer-level packaged 4-channel T/R phased array SiP module with 1W output power. It integrates power amplifier, LNA, RF switch, amplitude-phase modulation and temperature sensor, supporting time-division transmit/receive operation. With high integration, multi-function and low cost, it is designed for Ku-band phased array radar systems.
  • XH-GS0101GWP Ku-band 1W 4-channel Phased Array SiP Module | Wafer-level Packaged T/R RF Component,XH-Nexus,Ku-band 1W SiP module TCGS0101GWP

Description

Product Overview

The XH-GS0101GWP is a counter-UAV series RF SiP product based on wafer-level System-in-Package technology. Operating in the 14-18GHz Ku-band, it integrates 4-channel T/R links and amplitude-phase control functions, embedding power amplifier, low noise amplifier, T/R switch, digital phase shifter/attenuator and temperature sensor on a single chip. It supports time-division transmit/receive mode and can be directly used as the basic T/R unit of phased array radars.

This module integrates traditional discrete RF transceiver links into an ultra-compact 11.1×7.3×0.3mm package, greatly reducing front-end circuit size and BOM cost, and simplifying customer R&D and debugging. Featuring high integration, excellent performance, mass producibility and high consistency, it is widely applicable to Ku-band phased array scenarios such as counter-drone radar, low-altitude security and satellite communication.

Core Advantages

Wafer-level High-integration SiP Packaging: Integrates 4-channel T/R links, amplitude-phase control and sensing circuits into a single chip with only 11.1×7.3×0.3mm size, greatly reducing RF front-end dimensions

4-channel Integrated T/R Function: Built-in PA, LNA and T/R switch for time-division operation, one module completes 4-channel transmit amplification and receive low-noise amplification

High-performance RF Specifications: 30dBm (1W) transmit power, 3.5dB low receive noise figure and high phase/attenuation accuracy to meet phased array beamforming requirements

Built-in Temperature Sensing Unit: On-chip temperature sensor for real-time chip status monitoring, thermal management and performance compensation

Low Cost & Mass Deployment Ready: High integration greatly reduces external component count, BOM cost and production debugging effort, suitable for large-scale phased array antenna deployment

Industrial-grade Environmental Reliability: Wafer-level packaging delivers high reliability for harsh industrial and outdoor equipment environments

Technical Specifications

Category Item Specification
Basic Information Model XH-GS0101GWP
Package Type Wafer-level SiP
Dimensions 11.1 × 7.3 × 0.3 mm
Channels 4 Transmit/Receive Channels
Transmit RF Spec Operating Frequency 14 – 18 GHz
Transmit Gain 28 dB (typical)
Transmit Power 30 dBm (typical, 1W)
Power Added Efficiency (PAE) 20 % (typical)
RMS Phase Shift Accuracy (Tx) 3 ° (typical)
Receive RF Spec Receive Gain 24 dB (typical)
Receive Noise Figure 3.5 dB (typical) / 4 dB (max)
RMS Phase Shift Accuracy (Rx) 5 ° (typical)
RMS Attenuation Accuracy (Rx) 0.5 dB (typical)
Functional Features Operation Mode Time-division T/R (FMCW compatible)
Integrated Functions PA, LNA, Switch, Amplitude-phase Modulation, Temperature Sensor
Environmental Operating Temperature -40℃ ~ 85℃ (Industrial Grade)

Application Scenarios

  • Ku-band counter-UAV phased array radar front-end
  • Low-altitude security detection radar T/R modules
  • Ku-band satellite communication phased array terminals
  • Millimeter-wave imaging and detection equipment
  • Airborne/vehicular miniaturized radar systems
  • Massive phased array radar array deployment

 

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